Atomic Layer Deposition (ALD) is a highly precise thin-film deposition technique widely used in semiconductor manufacturing, nanotechnology, and advanced materials engineering. It is a vapor-phase process based on sequential, self-limiting chemical reactions that deposit material layer by layer at the atomic scale.
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The ALD process involves alternating exposure of a substrate to different precursor gases. Each precursor reacts with the surface in a self-limiting manner, meaning the reaction naturally halts once the surface is fully covered. This characteristic allows for precise, atomic-scale growth control and excellent conformity, even on substrates with complex geometries or high aspect ratios. The deposition cycle typically includes four steps: exposure to the first precursor, a purge step to remove excess precursor and reaction byproducts, exposure to the second precursor, and another purge. These cycles are repeated until the desired film thickness is achieved.